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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2SC3519/A
DESCRIPTION *Collector-Emitter Breakdown VoltageV(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A *Good Linearity of hFE *Complement to Type 2SA1386/A
APPLICATIONS *Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
2SC3519 VCBO Collector-Base Voltage
VCEO
Collector-Emitter Voltage
ww w
2SC3519A 2SC3519 2SC3519A
scs .i
160 V 180 160 V 180 5 V 15 A 4 A
.cn mi e
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature
PC
130
W
TJ
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER 2SC3519 V(BR)CEO Collector-Emitter Breakdown Voltage 2SC3519A Collector-Emitter Saturation Voltage 2SC3519 ICBO Collector Cutoff Current 2SC3519A IEBO hFE COB fT Emitter Cutoff Current DC Current Gain Output Capacitance VCB= 180V; IE= 0 VEB= 5V; IC= 0 IC= 5.0A; IB= 0.5A VCB= 160V; IE= 0 IC= 25mA ; IB= 0 180 CONDITIONS MIN 160
2SC3519/A
TYP.
MAX
UNIT
V
VCE(sat)
2.0 100
V
A 100 100 180 250 50 pF MHz A
IC= 5A ; VCE= 4V
Current-Gain--Bandwidth Product
Switching Times
ton tstg tf
Turn-on Time Storage Time Fall Time
w w
Y 90-180
w.
IE= 0; VCB= 10V;ftest= 1.0MHz
IE= -2A ; VCE= 12V
.cn mi cse is
50
0.2 IC= 10A ,RL= 4, IB1= -IB2= 1A,VCC= 40V 1.3 0.45
s s s
hFE Classifications O 50-100 P 70-140
isc Websitewww.iscsemi.cn
2


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